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Texas Instruments, Inc. PCN#20170627002
PCN Number:
20170627002
PCN Date:
June 29, 2017
Title:
Qualification of NFME as additional Assembly and Test Site for Select Devices
Customer Contact:
PCN Manager
Quality Services
Proposed 1
st
Ship Date:
Sept 29, 2017
Estimated Sample
Availability:
Date provided at
sample request
Change Type:
Assembly Site
Design
Wafer Bump Site
Assembly Process
Data Sheet
Wafer Bump Material
Assembly Materials
Part number change
Wafer Bump Process
Mechanical Specification
Test Site
Wafer Fab Site
Packing/Shipping/Labeling
Test Process
Wafer Fab Materials
Wafer Fab Process
PCN Details
Description of Change:
Texas Instruments is pleased to announce the Qualification of NFME as additional Assembly and
Test Site for Select Devices listed in the “Product Affected” Section. Current assembly sites and
Material differences are as follows.
Assembly Site
Assembly Site Origin
Assembly Country Code
Assembly Site City
HANA
HNT
THA
Ayutthaya
NFME
NFM
CHN
Chongchuan
Material Differences:
HANA
NFME
Mount compound
400180
A-03
Mold compound
450179
R-27
Test coverage, insertions, conditions will remain consistent with current testing and verified with
test MQ.
Reason for Change:
Continuity of supply.
Anticipated impact on Form, Fit, Function, Quality or Reliability (positive / negative):
None
Anticipated impact on Material Declaration
No Impact to the
Material Declaration
Material Declarations or Product Content reports are driven from
production data and will be available following the production
release. Upon production release the revised reports can be
obtained from the TI Eco-Info website. There is no impact to the
material meeting current regulatory compliance requirements with
this PCN change.
Changes to product identification resulting from this PCN:
Assembly Site
HANA
Assembly Site Origin (22L)
ASO: HNT
NFME
Assembly Site Origin (22L)
ASO: NFM
Sample product shipping label (not actual product label)

DRV5033FAQDBZR 数据手册

TI(德州仪器)
7 页 / 0.44 MByte
TI(德州仪器)
16 页 / 3.55 MByte
TI(德州仪器)
4 页 / 0.21 MByte
TI(德州仪器)
22 页 / 1.27 MByte
TI(德州仪器)
6 页 / 0.23 MByte

DRV5033 数据手册

TI(德州仪器)
DRV5033 数字锁存霍尔效应传感器
TI(德州仪器)
drv5033AJQDBZR 编带
TI(德州仪器)
TEXAS INSTRUMENTS  DRV5033AJQLPG  霍尔效应传感器, 全极, 30 mA, TO-226AA, 3 引脚, 2.5 V, 38 V
TI(德州仪器)
TEXAS INSTRUMENTS  DRV5033AJQDBZT  霍尔效应传感器, 全极, 30 mA, SOT-23, 3 引脚, 2.5 V, 38 V
TI(德州仪器)
高电压(高达 38V)、高带宽(高达 30kHz)全极开关 3-TO-92 -40 to 125
TI(德州仪器)
汽车类 2.7V 至 38V 霍尔效应全极开关 3-SOT-23 -40 to 125
TI(德州仪器)
汽车类 2.7V 至 38V 霍尔效应全极开关 3-SOT-23 -40 to 150
TI(德州仪器)
汽车类 2.7V 至 38V 霍尔效应全极开关 3-SOT-23 -40 to 125
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板机接口霍耳效应/磁性传感器 DRV5023-Q1 Dig-switc Sensor 3-SOT-23
TI(德州仪器)
汽车类 2.7V 至 38V 霍尔效应全极开关 3-TO-92 -40 to 150
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