Datasheet 搜索 > 双极性晶体管 > ROHM Semiconductor(罗姆半导体) > DTA114TETL 数据手册 > DTA114TETL 其他数据使用手册 2/13 页


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DTA114TETL 其他数据使用手册 - ROHM Semiconductor(罗姆半导体)
制造商:
ROHM Semiconductor(罗姆半导体)
分类:
双极性晶体管
封装:
SC-75-3
描述:
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 10 kohm
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DTA114TETL数据手册
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DTA114T series
Datasheet
llAbsolute maximum ratings (T
a
= 25°C)
Parameter Symbol Values Unit
Collector-base voltage
V
CBO
-50 V
Collector-emitter voltage
V
CEO
-50 V
Emitter-base voltage
V
EBO
-5 V
Collector current
I
C
-100 mA
Power dissipation
DTA114TM
P
D
*1
150
mW
DTA114TEB 150
DTA114TE 150
DTA114TUB 200
DTA114TUA 200
DTA114TKA 200
Junction temperature
T
j
150 ℃
Range of storage temperature
T
stg
-55 to +150 ℃
llElectrical characteristics (T
a
= 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BV
CBO
I
C
= -50μA
-50 - - V
Collector-emitter breakdown
voltage
BV
CEO
I
C
= -1mA
-50 - - V
Emitter-base breakdown voltage
BV
EBO
I
E
= -50μA -5 - - V
Collector cut-off current
I
CBO
V
CB
= -50V - - -500 nA
Emitter cut-off current
I
EBO
V
EB
= -4V - - -500 nA
Collector-emitter saturation voltage V
CE(sat)
I
C
= -10mA, I
B
= -1mA
- - -300 mV
DC current gain
h
FE
V
CE
= -5V, I
C
= -1mA 100 250 600 -
Input resistance
R
1
- 7 10 13 kΩ
Transition frequency
f
T
*2
V
CE
= -10V, I
E
= 5mA,
f = 100MHz
- 250 - MHz
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
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20151211 - Rev.002
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