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器件3D模型￥ 782.065
EP3C80F780C7N 其他数据使用手册 - Altera（阿尔特拉）
制造商:
Altera（阿尔特拉）
分类:
FPGA芯片
封装:
FBGA-780
描述:
可编程逻辑器件(CPLD/FPGA) EP3C80F780C7N FBGA-780
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P9
功能描述在P1
应用领域在P1
电气规格在P2
导航目录
EP3C80F780C7N数据手册
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CS7N80F A9
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2015V01
○
R
Silicon N-Channel Power MOSFET
General Description：
CS7N80F A9, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤1.8Ω )
l Low Gate Charge (Typical Data:34nC)
l Low Reverse transfer capacitances(Typical:12pF)
l 100% Single Pulse avalanche energy Test
Applications：
ATX Power、LED Power.
Absolute（Tc= 25 unless otherwise specified℃ ）：
Symbol
Parameter
Rating Units
V
DSS
Drain-to-Source Voltage
800
V
I
D
Continuous Drain Current
7
A
Continuous Drain Current T
C
= 100 °C
4
A
I
DM
a1
Pulsed Drain Current
28
A
V
GS
Gate-to-Source Voltage
±30 V
E
AS
a2
Single Pulse Avalanche Energy
150
mJ
E
AR
a1
Avalanche Energy ,Repetitive
20
mJ
I
AR
a1
Avalanche Current
2
A
dv/dt
a3
Peak Diode Recovery dv/dt
5.0
V/ns
P
D
Power Dissipation
48
W
Derating Factor above 25°C
0.38
W/℃
T
J
，T
stg
Operating Junction and Storage Temperature Range
150，–55 to 150 ℃
T
L
Maximum Temperature for Soldering
300
℃
V
DSS
800 V
I
D
7 A
P
D
(T
C
=25℃)
48 W
R
DS(ON)Typ
1.5 Ω
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