Datasheet 搜索 > FPGA芯片 > Altera（阿尔特拉） > EP4CGX150CF23C7N 数据手册 > EP4CGX150CF23C7N 产品封装文件 1/16 页
器件3D模型￥ 1154.404
EP4CGX150CF23C7N 产品封装文件 - Altera（阿尔特拉）
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Altera（阿尔特拉）
分类:
FPGA芯片
封装:
FBGA-484
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EP4CGX150CF23C7N数据手册
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August 2014 DocID025859 Rev 2 1/16
STH150N10F7-2
N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7
Power MOSFET in a H
2
PAK-2 package
Datasheet
−
production data
Figure 1. Internal schematic diagram
Features
• Among the lowest R
DS(on)
on the market
• Excellent figure of merit (FoM)
• Low C
rss
/C
iss
ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
$0Y
'7$%
*
6
1
3
2
TAB
H PAK-2
2
Order code V
DS
R
DS(on)max
I
D
P
TOT
STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W
Table 1. Device summary
Order code Marking Package Packaging
STH150N10F7-2 150N10F7
H
2
PAK-2
Tape and reel
www.st.com
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