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FDMS0312AS 其他数据使用手册 - Fairchild（飞兆/仙童）
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Fairchild（飞兆/仙童）
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MOS管
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PowerTDFN-8
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FDMS0312AS数据手册
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October 2014
©2010 Fairchild Semiconductor Corporation
FDMS0312AS Rev.C1
www.fairchildsemi.com
1
FDMS0312AS N-Channel PowerTrench
®
SyncFET
TM
FDMS0312AS
N-Channel PowerTrench
®
SyncFET
TM
30 V, 22 A, 5.0 mΩ
Features
Max r
DS(on)
= 5.0 mΩ at V
GS
= 10 V, I
D
= 18 A
Max r
DS(on)
= 6.2 mΩ at V
GS
= 4.5 V, I
D
= 16 A
Advanced Package and Silicon combinat
ion for low r
DS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Co
mpliant
General Description
The FDMS0312AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance.This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
4
3
2
1
5
6
7
8
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage (Note 4) ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25°C 22
A
-
Continuous (Silicon limited) T
C
= 25°C 70
-Continuous T
A
= 25°C (Note 1a) 18
-Pulsed
100
E
AS
Single Pulse Avalanche Energy (Note 3) 33 mJ
P
D
Power Dissipation T
C
= 25°C 36
W
Power Dissipation T
A
= 25°C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 3.4
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS0312AS FDMS0312AS Power 56 13 ’’ 12
mm 3000 units
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