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FDS6690 其他数据使用手册 - ON Semiconductor（安森美）
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ON Semiconductor（安森美）
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751EB
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FDS6690数据手册
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Publication Order Number:
FDS6690A/D
FDS6690A
Single N-Channel, Logic-Level, PowerTrench
MOSFET
General Description
This N-Channel Logic Level MOSFET is
produced using ON Semiconductor’s
advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
These devices are well suited for low voltage
and battery powered applications where low in-line
power loss and fast switching are required.
Features
• 11 A, 30 V. R
DS(ON)
= 12.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 17.0 mΩ @ V
GS
= 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D
D
D
D
S
S
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous
(Note 1a)
11 A
– Pulsed 50
Power Dissipation for Single Operation
(Note 1a)
2.5
P
D
(Note 1b)
1.0
W
E
AS
Single Pulse Avalanche Energy
(Note 3)
96 mJ
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
125
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6690A FDS6690A 13’’ 12mm 2500 units
FDS6
690A
© 2007 Semiconductor Components Industries, LLC.
October-2017, Rev. 5
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