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FDV305N 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
SOT-23-3
描述:
FAIRCHILD SEMICONDUCTOR FDV305N 晶体管, MOSFET, N沟道, 900 mA, 20 V, 220 mohm, 4.5 V, 1 V
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FDV305N数据手册
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January 2003
2003 Fairchild Semiconductor Corporation
FDV305N Rev D (W)
FDV305N
20V N-Channel PowerTrench
MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• Load switch
• Battery protection
• Power management
Features
• 0.9 A, 20 V R
DS(ON)
= 220 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 300 mΩ @ V
GS
= 2.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
G
D
S
SOT-23
D
S
G
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
± 12
V
I
D
Drain Current – Continuous 0.9 A
– Pulsed 2
P
D
Maximum Power Dissipation 0.35
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
357
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
305 FDV305N 7’’ 8mm 3000 units
FDV305N
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