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器件3D模型￥ 23.998
FT4222HQ-D-T 其他数据使用手册 - FTDI Chip（飞特帝亚）
制造商:
FTDI Chip（飞特帝亚）
封装:
VQFN-32
描述:
接口桥接器, USB至SPI, I2C, 4.5 V, 5.5 V, VQFN, 32 引脚, -40 °C
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
型号编号列表在P2
导航目录
FT4222HQ-D-T数据手册
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of 2 Go
若手册格式错乱，请下载阅览PDF原文件
Registered in Scotland: SC136640 © Copyright 2016 Future Technology Devices International Ltd
Future Technology Devices International Limited
Unit 1, 2 Seaward Place, Centurion Business Park,
Glasgow, G41 1HH. Scotland. U.K.
Tel.: +44 (0) 141 429 2777 Fax.: + 44 (0) 141 429 2758
E-Mail : sales1@ftdichip.com Web : http://www.ftdichip.com
Document Title:Rohs Statement Devices QD_104
FTDI Document No: FT_000223
FTDI RoHS2 - 2011/65/EU & (EU) 2015/863
Compliance Statement
This document hereby certifies that the FTDI integrated circuit devices (with the exception listed in
table 2) are in compliance with Directives 2011/65/EU and (EU) 2015/863 of the European
Parliament on the restriction of the use of certain hazardous substances in electrical and electronic
equipment (also known as “RoHS Recast”). In addition, this declaration of conformity is issued
under the sole responsibility of FTDI. Specifically, products manufactured do not contain the
substances listed in the table 1 in concentrations greater than the listed maximum value.
Substance
Maximum Limit
(ppm)
Lead (Pb)
1000
Cadmium (Cd)
100
Mercury (Hg)
1000
Hexavalent Chromium (Cr6+)
1000
Poly Brominated Biphenyls (PBB)
1000
Poly Brominated Diphenyl ethers (PBDE)
1000
Bis(2-ethylhexyl) phthalate (DEHP)
1000
Butyl benzyl phthalate (BBP)
1000
Dibutyl phthalate (DBP)
1000
Diisobutyl phthalate (DIBP)
1000
Table 1
On behalf of Future Technology Devices International Ltd,
Fred Dart, Managing Director
Future Technology Devices International Ltd.
Unit 1, 2 Seaward Place, GlasgowG41 1HH, Scotland, United Kingdom
Tel.: +44(0)1414292777 Fax:+44(0)1414292458
DISCLAIMER
This declaration and its accuracy are made, solely based on available information and analytical
data provided by our material suppliers.
Non-C
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