Datasheet 搜索 > 光耦合器/光隔离器 > Fairchild（飞兆/仙童） > H11A2SR2VM 数据手册 > H11A2SR2VM 其他数据使用手册 2/9 页
器件3D模型￥ 0
H11A2SR2VM 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
光耦合器/光隔离器
封装:
DIP-6
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
H11A2SR2VM数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
4NXXM, H11AXM General Purpose 6-Pin Phototransistor Optocouplers
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.0 2
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Individual Component Characteristics
Isolation Characteristics
*Typical values at T
A
= 25°C
Symbol Parameter Value Units
TOTAL DEVICE
T
STG
Storage Temperature -55 to +150 °C
T
OPR
Operating Temperature -55 to +100 °C
T
SOL
Wave solder temperature (see page 8 for reflow solder profile) 260 for 10 sec °C
P
D
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
250 mW
2.94
EMITTER
I
F
DC/Average Forward Input Current 60 mA
V
R
Reverse Input Voltage 6 V
I
F
(pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3 A
P
D
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
120 mW
1.41 mW/°C
DETECTOR
V
CEO
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base Voltage 70 V
V
ECO
Emitter-Collector Voltage 7 V
P
D
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
150 mW
1.76 mW/°C
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 10mA 1.18 1.50 V
I
R
Reverse Leakage Current V
R
= 6.0V 0.001 10 µA
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 1.0mA, I
F
= 0 30 100 V
BV
CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
F
= 0 70 120 V
BV
ECO
Emitter-Collector Breakdown Voltage I
E
= 100µA, I
F
= 0 7 10 V
I
CEO
Collector-Emitter Dark Current V
CE
= 10V, I
F
= 0 1 50 nA
I
CBO
Collector-Base Dark Current V
CB
= 10V 20 nA
C
CE
Capacitance V
CE
= 0V, f = 1 MHz 8 pF
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation Voltage f = 60Hz, t = 1 sec 7500 Vac(pk)
R
ISO
Isolation Resistance V
I-O
= 500 VDC 10
11
Ω
C
ISO
Isolation Capacitance V
I-O
= &, f = 1MHz 0.2 2 pF
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
