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H11AA4VM 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
光耦合器/光隔离器
封装:
DIP-6
描述:
DIP6 通孔 单通道 30 V 7500 VAC (Pk) 光电晶体管 光耦合器
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H11AA4VM数据手册
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若手册格式错乱，请下载阅览PDF原文件
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA4M Rev. 1.3 4
H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C Unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= ±10 mA 1.17 1.50 V
C
J
Capacitance V
F
= 0 V, f = 1.0 MHz 80 pF
DETECTOR
BV
CEO
Breakdown Voltage, Collector-to-Emitter I
C
= 1.0 mA, I
F
= 0 30 100 V
BV
CBO
Breakdown Voltage, Collector-to-Base I
C
= 100 µA, I
F
= 0 70 120 V
BV
EBO
Breakdown Voltage, Emitter-to-Base I
E
= 100 µA, I
F
= 0 5 10 V
BV
ECO
Breakdown Voltage, Emitter-to-Collector I
E
= 100 µA, I
F
= 0 7 10 V
I
CEO
Leakage Current, Collector-to-Emitter V
CE
= 10 V, I
F
= 0 1 50 nA
C
CE
Capacitance Collector to Emitter V
CE
= 0, f = 1 MHz 10 pF
C
CB
Collector to Base V
CB
= 0, f = 1 MHz 80 pF
C
EB
Emitter to Base V
EB
= 0, f = 1 MHz 15 pF
Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit
CTR
CE
Current Transfer Ratio,
Collector-to-Emitter
I
F
= ±10 mA, V
CE
= 10 V
H11AA1M 20 %
H11AA4M 100 %
Current Transfer Ratio,
Symmetry
I
F
= ±10 mA, V
CE
= 10 V
(Figure 13)
All 0.33 3.00
V
CE(SAT)
Saturation Voltage,
Collector-to-Emitter
I
F
= ±10 mA, I
CE
= 0.5 mA
All 0.40 V
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
V
ISO
Input-Output Isolation Voltage t = 1 Minute 4170 VAC
RMS
C
ISO
Isolation Capacitance V
I-O
= 0 V, f = 1 MHz 0.7 pF
R
ISO
Isolation Resistance V
I-O
= ±500 VDC, T
A
= 25°C 10
11
Ω
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