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H11F3300
器件3D模型
0.468
导航目录
  • 典型应用电路图在P6
  • 原理图在P1
  • 封装尺寸在P7
  • 焊盘布局在P7
  • 型号编码规则在P8
  • 标记信息在P8
  • 封装信息在P8P9
  • 技术参数、封装参数在P2P9
  • 应用领域在P1P6
  • 电气规格在P2
H11F3300数据手册
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PACKAGE
SCHEMATIC
PHOTO FET OPTOCOUPLERS
3/19/03
Page 1 of 10
© 2003 Fairchild Semiconductor Corporation
H11F1 H11F2 H11F3
DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-
detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
FEATURES
As a remote variable resistor
100
to
300 M
99.9% linearity
15 pF shunt capacitance
100 G
I/O isolation resistance
As an analog switch
Extremely low offset voltage
60 V
pk-pk
signal capability
No charge injection or latch-up
•t
on
, t
off
15 µS
UL recognized (File #E90700)
VDE recognized (File #E94766)
Ordering option ‘300’ (e.g. H11F1.300)
APPLICATIONS
As a variable resistor –
Isolated variable attenuator
•Automatic gain control
Active filter fine tuning/band switching
As an analog switch –
Isolated sample and hold circuit
Multiplexed, optically isolated A/D conversion
6
1
6
1
6
1
1
2
6
5
4
OUTPUT
TERM.
OUTPUT
TERM.
ANODE
CATHODE
3

H11F3300 数据手册

Fairchild(飞兆/仙童)
10 页 / 0.52 MByte
Fairchild(飞兆/仙童)
10 页 / 0.54 MByte
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