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H11F3SVM 其他数据使用手册 - Fairchild(飞兆/仙童)
制造商:
Fairchild(飞兆/仙童)
分类:
光耦合器/光隔离器
封装:
PDIP-6
描述:
光耦合器,模拟 FET 输出,Fairchild Semiconductor光电探测器从 IRED 发光二极管输入以电气方式隔离。 光耦合器如同理想的隔离 FET 一样工作,设计用于无失真控制低交流和直流电平模拟信号。### 光耦合器,Fairchild Semiconductor
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H11F3SVM数据手册
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©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 2
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Device Value
Units
TOTAL DEVICE
T
STG
Storage Temperature All -40 to +150
°C
T
OPR
Operating Temperature All -40 to +100
°C
T
SOL
Lead Solder Temperature All 260 for 10 sec
°C
EMITTER
I
F
Continuous Forward Current All 60
mA
V
R
Reverse Voltage All 5
V
I
F(pk)
Forward Current – Peak (10µs pulse, 1% duty cycle) All 1
A
P
D
LED Power Dissipation 25°C Ambient All 100
mW
Derate Linearly from 25°C 1.33
mW/°C
DETECTOR
P
D
Detector Power Dissipation @ 25°C All 300
mW
Derate linearly from 25°C 4.0
mW/°C
BV
4-6
Breakdown Voltage (either polarity) H11F1M,
H11F2M
±30 V
H11F3M ±15 V
I
4-6
Continuous Detector Current (either polarity) All ±100 mA
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