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H11F3SVM
器件3D模型
9.767
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  • 典型应用电路图在P6
  • 原理图在P1
  • 封装尺寸在P1P7
  • 焊盘布局在P7
  • 型号编码规则在P8
  • 标记信息在P8
  • 封装信息在P8
  • 功能描述在P1
  • 技术参数、封装参数在P2
  • 应用领域在P1P6
  • 电气规格在P3
H11F3SVM数据手册
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©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 2
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Device Value
Units
TOTAL DEVICE
T
STG
Storage Temperature All -40 to +150
°C
T
OPR
Operating Temperature All -40 to +100
°C
T
SOL
Lead Solder Temperature All 260 for 10 sec
°C
EMITTER
I
F
Continuous Forward Current All 60
mA
V
R
Reverse Voltage All 5
V
I
F(pk)
Forward Current – Peak (10µs pulse, 1% duty cycle) All 1
A
P
D
LED Power Dissipation 25°C Ambient All 100
mW
Derate Linearly from 25°C 1.33
mW/°C
DETECTOR
P
D
Detector Power Dissipation @ 25°C All 300
mW
Derate linearly from 25°C 4.0
mW/°C
BV
4-6
Breakdown Voltage (either polarity) H11F1M,
H11F2M
±30 V
H11F3M ±15 V
I
4-6
Continuous Detector Current (either polarity) All ±100 mA

H11F3SVM 数据手册

Fairchild(飞兆/仙童)
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Fairchild(飞兆/仙童)
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