Datasheet 搜索 > 光耦合器/光隔离器 > ON Semiconductor（安森美） > H11G1SR2M 数据手册 > H11G1SR2M 其他数据使用手册 1/11 页
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H11G1SR2M 其他数据使用手册 - ON Semiconductor（安森美）
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ON Semiconductor（安森美）
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光耦合器/光隔离器
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DIP-6
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H11G1SR2M数据手册
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H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M Rev. 1.0.5
December 2014
H11G1M, H11G2M
6-Pin DIP High Voltage Photodarlington Optocouplers
Features
■
High BV
CEO
:
– 100 V Minimum for H11G1M
– 80 V Minimum for H11G2M
■
High Sensitivity to Low Input Current
(Minimum 500% CTR at I
F
= 1 mA)
■
Low Leakage Current at Elevated Temperature
(Maximum 100 µA at 80°C)
■
Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
RMS
for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■
CMOS Logic Interface
■
Telephone Ring Detector
■
Low Input TTL Interface
■
Power Supply Isolation
■
Replace Pulse Transformer
General Description
The H11G1M and H11G2M are photodarlington-type
optically coupled optocouplers. These devices have a
gallium arsenide infrared emitting diode coupled with a
silicon darlington connected phototransistor which has
an integral base-emitter resistor to optimize elevated
temperature characteristics.
Schematic Package Outlines
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6
BASE
N/C
Figure 1. Schematic
Figure 2. Package Outlines
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