Datasheet 搜索 > 光耦合器/光隔离器 > Fairchild（飞兆/仙童） > H11G23SD 数据手册 > H11G23SD 其他数据使用手册 1/7 页
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H11G23SD 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
光耦合器/光隔离器
封装:
SMD-6
描述:
高压光电复合光耦合器 HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
H11G23SD数据手册
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of 7 Go
若手册格式错乱，请下载阅览PDF原文件
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Units
TOTAL DEVICE
T
STG
-55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
-55 to +100 °C
Lead Solder Temperature T
SOL
260 for 10 sec °C
Total Device Power Dissipation @ T
A
= 25°C
P
D
260 mW
Derate above 25°C 3.5 mW/°C
Input-Output Isolation Voltage V
ISO
5300 Vac(rms)
EMITTER
I
F
60 mA
Forward Input Current
Reverse Input Voltage V
R
6.0 V
Forward Current - Peak (1µs pulse, 300pps) I
F
(pk) 3.0 A
LED Power Dissipation @ T
A
= 25°C
P
D
100 mW
Derate above 25°C 1.8 mW/°C
DETECTOR
Collector-Emitter Voltage
H11G1 V
CEO
100 V
H11G2 80
H11G3 55
Detector Power Dissipation @ T
A
= 25°C
P
D
200 mW
Derate above 25°C 2.67 mW/°C
FEATURES
• High BV
CEO
- Minimum 100 V for H11G1
- Minimum 80 V for H11G2
- Minimum 55 V for H11G3
• High sensitivity to low input current
Minimum 500 percent CTR at I
F
= 1 mA
• Low leakage current at elevated temperature
(maximum 100 µA at 80°C)
• Underwriters Laboratory (UL) recognized File# E90700
DESCRIPTION
The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a
gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor
which has an integral base-emitter resistor to optimize elevated temperature characteristics.
7/21/00 200045A
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6
BASE
N/C
HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
H11G1
H11G2
H11G3
APPLICATIONS
• CMOS logic interface
• Telephone ring detector
• Low input TTL interface
• Power supply isolation
• Replace pulse transformer
NOTE
All dimensions are in inches (millimeters)
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