Datasheet 搜索 > 光耦合器/光隔离器 > Fairchild（飞兆/仙童） > H11G3S 数据手册 > H11G3S 其他数据使用手册 2/7 页
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H11G3S 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
光耦合器/光隔离器
封装:
SMD-DIP-6
描述:
高压光电复合光耦合器 HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
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H11G3S数据手册
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ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C
Unless otherwise specified.)
7/21/00 200045A
Characteristic Test Conditions Symbol Device Min Typ** Max Unit
EMITTER
(I
F
= 10 mA) V
F
ALL 1.3 1.50 V
Forward Voltage
Forward Voltage Temp. V
F
ALL -1.8 mV/°C
Coefficient T
A
Reverse Breakdown Voltage (I
R
= 10 µA) BV
R
ALL 3.0 25 V
Junction Capacitance
(V
F
= 0 V, f = 1 MHz)
C
J
ALL 50 pF
(V
F
= 1 V, f = 1 MHz) ALL 65 pF
Reverse Leakage Current (V
R
= 3.0 V) I
R
ALL 0.001 10 µA
DETECTOR H11G1 100
Breakdown Voltage (I
C
= 1.0 mA, I
F
= 0) BV
CEO
H11G2 80
Collector to Emitter H11G3 55
H11G1 100 V
Collector to Base (I
C
= 100 µA)
BV
CBO
H11G2 80
H11G3 55
Emitter to Base BV
EBO
ALL 7 10
(V
CE
= 80 V, I
F
= 0) H11G1
Leakage Current
(V
CE
= 60 V, I
F
= 0) H11G2 100 nA
Collector to Emitter
(V
CE
= 30 V, I
F
= 0) I
CEO
H11G3
(V
CE
= 80 V, I
F
= 0, T
A
= 80°C) H11G1
100 µA
(V
CE
= 60 V, I
F
= 0, T
A
= 80°C) H11G2
INDIVIDUAL COMPONENT CHARACTERISTICS
DC Characteristic Test Conditions Symbol Device Min Typ** Max Unit
EMITTER
Current Transfer Ratio
(I
F
= 10 mA, V
CE
= 1 V) H11G1/2 100 (1000)
Collector to Emitter
CTR mA (%)
(I
F
= 1 mA, V
CE
= 5 V)
H11G1/2 5 (500)
H11G3 2 (200)
(I
F
= 16 mA, I
C
= 50 mA) H11G1/2 0.85 1.0
Saturation Voltage (I
F
= 1 mA, I
C
= 1 mA) V
CE (SAT)
H11G1/2 0.75 1.0 V
(I
F
= 20 mA, I
C
= 50 mA) H11G3 0.85 1.2
TRANSFER CHARACTERISTICS
Characteristic Test Conditions Symbol Device Min Typ** Max Unit
SWITCHING TIMES
(R
L
= 100 1, I
F
= 10 mA) t
on
ALL 5
Turn-on Time µs
Turn-off Time (V
CE
= 5 V) Pulse Width 6300 µs, f 630 Hz) t
off
ALL 100
TRANSFER CHARACTERISTICS
HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
H11G1, H11G2, H11G3
** All typical values at T
A
= 25°C
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