Datasheet 搜索 > 双极性晶体管 > ROHM Semiconductor（罗姆半导体） > IMX9T110 数据手册 > IMX9T110 其他数据使用手册 1/4 页
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IMX9T110 其他数据使用手册 - ROHM Semiconductor（罗姆半导体）
制造商:
ROHM Semiconductor（罗姆半导体）
分类:
双极性晶体管
封装:
SC-74-6
描述:
IMX9 系列 20 V 500 mA 表面贴装 双 NPN 通用 晶体管-SC-74
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IMX9T110数据手册
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IMX9
Transistors
General purpose transistor
(isolated dual transistors)
IMX9
z
zz
z
Features
1) Two 2SD2114K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting
machine.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
z
zz
z
Structure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr
1
and Tr
2
.
z
zz
zExternal dimensions (Units : mm)
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol: X9
(1)
(2)
(3)
0.3
+0.1
−0.05
1.6
2.8±0.2
+0.2
−0.1
(6)
(5)
(4)
0.95 0.95
1.9±0.2
2.9±0.2
1.1
+0.2
0.8±0.1
−0.1
0~0.1
0.3~0.6
0.15
−0.06
+0.1
All terminals have same dimensions
z
zz
zAbsolute maximum ratings (Ta = 25°C) z
zz
zEquivalent circuit
Parameter Symbol Limits Unit
V
CBO
25 V
V
CEO
20 V
V
EBO
12 V
I
C
500 mA
Tj 150
°C
Tstg
−55~+150 °C
Pd 300(TOTAL) mW
∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power dissipation
∗
200mW per element must not be exceeded.
Tr
2
Tr
1
(4) (5) (6)
(3) (2) (1)
z
zz
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol
BV
CBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Min.
25
20
12
−
−
560
−
−
−
−
−
−
−
0.18
−
−
−
0.5
0.5
2700
0.4
V
I
C=10µA
I
C=1mA
I
E=10µA
V
CB=20V
V
EB=10V
V
CE=3V, IC=10mA
I
C/IB=500mA/20mA
V
V
µA
µA
−
V
Typ. Max. Unit Conditions
f
T
Ron
Cob
−
−
−
350
0.8
8
−
−
−
V
CE=10V, IE=−50mA, f=100MHz
I
B=1mA, Vi=100mVrms, f=1kHz
V
CB=10V, IE=0A, f=1MHz
MHz
Ω
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Collector-emitter saturation voltage
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