Datasheet 搜索 > Infineon（英飞凌） > IR2103STR 数据手册 > IR2103STR 其他数据使用手册 1/13 页
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IR2103STR 其他数据使用手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
封装:
SOIC-8
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IR2103STR数据手册
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Data Sheet No. PD60045-O
Typical Connection
Product Summary
V
OFFSET
600V max.
I
O
+/- 130 mA / 270 mA
V
OUT
10 - 20V
t
on/off
(typ.) 680 & 150 ns
Deadtime (typ.) 520 ns
HALF-BRIDGE DRIVER
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V and 15V logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• Internal set deadtime
• High side output in phase with HIN input
• Low side output out of phase with
LIN
input
• Also available LEAD-FREE
Description
The IR2103(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer
stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
www.irf.com 1
V
CC
V
B
V
S
HO
LOCOM
HIN
LIN
LIN
HIN
up to 600V
TO
LOAD
V
CC
IR2103
(
S
) & (PbF)
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
Packages
8-Lead SOIC
IR2103S
8-Lead PDIP
IR2103
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