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IRF1010E 其他数据使用手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
封装:
TO-220
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3D模型
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技术参数、封装参数在P1
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IRF1010E数据手册
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HEXFET
®
Power MOSFET
02/14/02
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.75
R
θJA
Junction-to-Ambient (PCB mount)** ––– 40
Thermal Resistance
www.irf.com 1
V
DSS
= 60V
R
DS(on)
= 12mΩ
I
D
= 84A
S
D
G
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for low-
profile applications.
Description
Absolute Maximum Ratings
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 84
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 59 A
I
DM
Pulsed Drain Current 330
P
D
@T
C
= 25°C Power Dissipation 200 W
Linear Derating Factor 1.4 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
I
AR
Avalanche Current 50 A
E
AR
Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
IRF1010ES
IRF1010EL
D
2
Pak
IRF1010ES
TO-262
IRF1010EL
l Advanced Process Technology
l Surface Mount (IRF1010ES)
l Low-profile through-hole (IRF1010EL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
°C/W
PD - 91720
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