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IRF1010EPBF 产品手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
TO-220-3
描述:
INFINEON IRF1010EPBF 晶体管, MOSFET, N沟道, 81 A, 60 V, 12 mohm, 10 V, 4 V
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8P9
标记信息在P8P9
技术参数、封装参数在P1
电气规格在P2
导航目录
IRF1010EPBF数据手册
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若手册格式错乱，请下载阅览PDF原文件
IRF1010NS
IRF1010NL
HEXFET
®
Power MOSFET
02/14/02
V
DSS
= 55V
R
DS(on)
= 11mΩ
I
D
= 85A
S
D
G
Advanced HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for low-
profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Absolute Maximum Ratings
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 85
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 60 A
I
DM
Pulsed Drain Current 290
P
D
@T
C
= 25°C Power Dissipation 180 W
Linear Derating Factor 1.2 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
I
AR
Avalanche Current 43 A
E
AR
Repetitive Avalanche Energy 18 mJ
dv/dt Peak Diode Recovery dv/dt 3.6 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
2
D Pak
TO-262
IRF1010NLIRF1010NS
www.irf.com 1
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.85
R
θJA
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 °C/W
Thermal Resistance
PD - 94171
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