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IRF1324STRL-7PP 其他数据使用手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
TO-263-7
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IRF1324STRL-7PP数据手册
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of 9 Go
若手册格式错乱，请下载阅览PDF原文件
12/21/10
www.irf.com 1
HEXFET
®
Power MOSFET
S
D
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
IRF1324S-7PPbF
GDS
Gate Drain Source
D
2
Pak 7 Pin
G
S
S
D
S
S
S
V
DSS
24V
R
DS
(
on
)
typ.
0.8mΩ
max.
1.0m
Ω
I
D
(
Silicon Limited
)
429A
c
I
D (Package Limited)
240A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
E
AS (Thermally limited)
Sin
g
le Pulse Avalanche Ener
g
y
e
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Ener
g
y
g
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
k
–––
0.50
°C/W
R
θJA
Junction-to-Ambient (PCB Mount) , D
2
Pak
j
––– 40
230
See Fig. 14, 15, 22a, 22b,
300
1.6
-55 to + 175
± 20
2.0
300 (1.6mm from case)
Max.
429
c
303
c
1640
240
PD - 97263B
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