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IRF1405 其他数据使用手册 - International Rectifier（国际整流器）
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IRF1405数据手册
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Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 169
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 118 A
I
DM
Pulsed Drain Current 680
P
D
@T
C
= 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 560 mJ
I
AR
Avalanche Current See Fig.12a, 12b, 15, 16 A
E
AR
Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
HEXFET
®
Power MOSFET
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET
®
Power MOSFETs
utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
S
D
G
Absolute Maximum Ratings
V
DSS
= 55V
R
DS(on)
= 5.3mΩ
I
D
= 169A
Description
12/07/04
www.irf.com 1
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
Benefits
AUTOMOTIVE MOSFET
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.45 °C/W
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
θJA
Junction-to-Ambient ––– 62
TO-220AB
IRF1405
Typical Applications
O Electric Power Steering (EPS)
O Anti-lock Braking System (ABS)
O Wiper Control
O Climate Control
O Power Door
PD-93991D
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