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IRF2807 产品手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
TO-220
Pictures:
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符号图
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引脚图
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IRF2807数据手册
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IRF2807
HEXFET
®
Power MOSFET
3/16/01
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.65
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
www.irf.com 1
V
DSS
= 75V
R
DS(on)
= 13mΩ
I
D
= 82A
S
D
G
TO-220AB
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
PD - 91517
Absolute Maximum Ratings
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 82
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 58 A
I
DM
Pulsed Drain Current 280
P
D
@T
C
= 25°C Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
I
AR
Avalanche Current 43 A
E
AR
Repetitive Avalanche Energy 23 mJ
dv/dt Peak Diode Recovery dv/dt 5.9 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
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