Datasheet 搜索 > MOS管 > International Rectifier（国际整流器） > IRF2807ZLPBF 数据手册 > IRF2807ZLPBF 其他数据使用手册 1/13 页
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IRF2807ZLPBF 其他数据使用手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
TO-262-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P9P10P11
标记信息在P9P10P11
技术参数、封装参数在P1
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IRF2807ZLPBF数据手册
Page:
of 13 Go
若手册格式错乱，请下载阅览PDF原文件
06/30/04
www.irf.com 1
HEXFET
®
is a registered trademark of International Rectifier.
IRF2807ZPbF
IRF2807ZSPbF
IRF2807ZLPbF
HEXFET
®
Power MOSFET
S
D
G
V
DSS
= 75V
R
DS(on)
= 9.4mΩ
I
D
= 75A
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
D
2
Pak
IRF2807ZS
TO-220AB
IRF2807Z
TO-262
IRF2807ZL
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
i
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
h
mJ
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 0.90 °C/W
R
θ
CS
Case-to-Sink, Flat, Greased Surface
0.50 –––
R
θ
JA
Junction-to-Ambient ––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount, steady state)
j
––– 40
Max.
89
63
350
75
10 lbf•in (1.1N•m)
170
1.1
± 20
160
200
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
PD - 95488
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