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IRF3415STRR
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IRF3415STRR数据手册
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IRF3415S/L
HEXFET
®
Power MOSFET
PD - 91509C
l Advanced Process Technology
l Surface Mount (IRF3415S)
l Low-profile through-hole (IRF3415L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
5/13/98
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3415L) is available for low-
profile applications.
Description
V
DSS
= 150V
R
DS(on)
= 0.042
I
D
= 43A
2
D Pak
TO-262
S
D
G
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.75
R
θJA
Junction-to-Ambient ( PCB Mounted,steady-state)** 40
Thermal Resistance
°C/W
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 43
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 30 A
I
DM
Pulsed Drain Current  150
P
D
@T
A
= 25°C Power Dissipation 3.8 W
P
D
@T
C
= 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 590 mJ
I
AR
Avalanche Current 22 A
E
AR
Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C

IRF3415STRR 数据手册

Infineon(英飞凌)
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Infineon(英飞凌)
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IRF3415 数据手册

Infineon(英飞凌)
International Rectifier(国际整流器)
New Jersey Semiconductor
IRF
功率MOSFET ( VDSS = 150V , RDS(ON) = 0.042ohm ,ID = 43A ) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Infineon(英飞凌)
INFINEON  IRF3415PBF  晶体管, MOSFET, N沟道, 37 A, 150 V, 42 mohm, 10 V, 4 V
Infineon(英飞凌)
HEXFET® N 通道功率 MOSFET 最大 50A,InfineonHEXFET® 电源 MOSFET 具有各种坚固的单 N 通道设备,用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管,Infineon (IR)Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
Infineon(英飞凌)
INFINEON  IRF3415SPBF  晶体管, MOSFET, N沟道, 43 A, 150 V, 42 mohm, 10 V, 4 V
International Rectifier(国际整流器)
INTERNATIONAL RECTIFIER  IRF3415PBF  场效应管, N 通道, MOSFET, 150V, 43A, TO-220AB 新
International Rectifier(国际整流器)
INTERNATIONAL RECTIFIER  IRF3415SPBF  场效应管, N 通道, MOSFET, 150V, 43A, D2-PAK 新
International Rectifier(国际整流器)
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