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IRF3710 其他数据使用手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
N沟道MOS管
封装:
TO-220
Pictures:
3D模型
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引脚图
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技术参数、封装参数在P1
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IRF3710数据手册
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IRF3710S
IRF3710L
HEXFET
®
Power MOSFET
09/15/09
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.75 °C/W
R
θJA
Junction-to-Ambient (PCB Mounted,steady-state)** ––– 40
Thermal Resistance
www.irf.com 1
V
DSS
= 100V
R
DS(on)
= 23mΩ
I
D
= 57A
S
D
G
Advanced HEXFET
®
Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Absolute Maximum Ratings
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 57
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 40 A
I
DM
Pulsed Drain Current 180
P
D
@T
C
= 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
I
AR
Avalanche Current 28 A
E
AR
Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.8 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
PD - 94201C
D
2
Pak
IRF3710S
TO-262
IRF3710L
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