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IRF6100 其他数据使用手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
FlipFet-4
Pictures:
3D模型
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IRF6100数据手册
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HEXFET
®
Power MOSFET
IRF6100
Parameter Max. Units
V
DS
Drain- Source Voltage -20 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 4.5V ±5.1
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 4.5V ±3.5 A
I
DM
Pulsed Drain Current ±35
P
D
@T
A
= 25°C Power Dissipation 2.2
P
D
@T
A
= 70°C Power Dissipation 1.4
Linear Derating Factor 17 mW/°C
V
GS
Gate-to-Source Voltage ± 12 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
www.irf.com 1
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
is well known for,
provides the designer with an ex-
tremely efficient and reliable device.
The FlipFET™ package, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFET™ the best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Description
l Ultra Low R
DS(on)
per Footprint Area
l Low Thermal Resistance
l P-Channel MOSFET
l One-third Footprint of SOT-23
l Super Low Profile (<.8mm)
l Available Tested on Tape & Reel
FlipFET ISOMETRIC
Symbol Parameter Typ. Max. Units
R
θJA
Junction-to-Ambient 56.5 °C/W
R
θJ-PCB
Junction-to-PCB mounted 35 –––
Thermal Resistance
07/13/06
V
DSS
R
DS(on)
max I
D
-20V 0.065Ω@V
GS
= -4.5V -5.1A
0.095Ω@V
GS
= -2.5V -4.1A
S
D
G
PD - 93930F
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