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IRF6218 其他数据使用手册 - Vishay Intertechnology
制造商:
Vishay Intertechnology
封装:
TO-220
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P7
标记信息在P7
技术参数、封装参数在P1
应用领域在P1
导航目录
IRF6218数据手册
Page:
of 8 Go
若手册格式错乱，请下载阅览PDF原文件
www.irf.com 1
04/22/04
IRF6218
SMPS MOSFET
HEXFET
®
Power MOSFET
Notes through are on page 7
PD - 95862
l Reset Switch for Active Clamp
Reset DC-DC converters
Benefits
Applications
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
S
D
G
V
DSS
R
DS(on)
max I
D
-150V
150m
:
@V
GS
= -10V
-27A
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor W/°C
dv/dt Peak Diode Recovery dv/dt
h
V/ns
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
g
––– 0.61 °C/W
R
θ
CS
Case-to-Sink, Flat, Greased Surface
g
0.50 –––
R
θ
JA
Junction-to-Ambient
g
––– 62
1.6
250
Max.
-27
-19
-110
-150
± 20
300 (1.6mm from case )
10 lbf•in (1.1N•m)
8.2
-55 to + 175
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