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IRF640 其他数据使用手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
TO-220
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
型号编码规则在P1
封装信息在P1
技术参数、封装参数在P2
电气规格在P2
导航目录
IRF640数据手册
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<^£.mi-(2onditctoi
LPioducti,
Una.
20
STERN AVE.
SPRINGFIELD,
NEW
JERSEY 07081
U.S.A.
TELEPHONE:
(973) 376-2922
(212)227-6005
FAX:
(973) 376-8960
RFP4N100,
RF1S4N100SM
4.3A,
1000V,
3.500
Ohm,
High
Voltage,
N-Channel
Power
MOSFETs
The RFP4N100
and
RFP4N100SM
are
N-Channel
enhancement mode silicon gate power field effect
transistors. They
are
designed
for use in
applications such
as
switching regulators, switching converters, motor
drivers, relay drivers,
and
drivers
for
high
power bipolar
switching transistors requiring high speed
and low
gate
drive power. This type
can be
operated directly from
an
integrated
circuit.
Ordering
Information
Features
•
4.3A, 1000V
•
rDS(ON)
=
3.500Q
•
UIS
Rating Curve (Single Pulse)
•
-55°C
to
150°C
Operating Temperature
Symbol
Q
D
PART NUMBER
RFP4N100
RF1S4N100SM
PACKAGE
TO-220AB
TO-263AB
BRAND
RFP4N100
F1S4N100
G
a
NOTE: When ordering,
use the
entire part number.
6 S
Packaging
JEDEC
TO-220AB
JEDEC
TO-263AB
DRAIN (FLANGE)
SOURCE
DRAIN
,. -
.-"•*'„,
GATE
X*
GATE
SOURCE
DRAIN
"(FLANGE)
NJ
Semi-Conductors
reserves
the
right
to
change
test
conditions,
parameter
limits
and
package
dimensions
without
notice.
Information
furnished
by NJ
Semi-Conductors
is
believed
to be
both
accurate
and
reliable
at the
time
of
going
to
press.
However,
NJ
Semi-Conductors
assumes
no
responsibility
for any
errors
or
omissions
discovered
in its
use.
NJ
Semi-Conductors
encourages
customers
to
verify
that
datasheets
are
current
before
placing
orders.
Quality
Semi-Conductors
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