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IRF720 其他数据使用手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
TO-220-3
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IRF720数据手册
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HEXFET
®
Power MOSFET
Fifth Generation HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a
typical PCB mount application.
6/5/00
Description
l Generation 5 Technology
l P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
V
DSS
= -20V
R
DS(on)
= 0.06Ω
IRF7207
Top View
8
1
2
3
4
5
6
7
D
D
DG
S
A
D
S
S
www.irf.com 1
Parameter Max. Units
V
DS
Drain- Source Voltage -20 V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -4.5V -5.4
I
D
@ T
C
= 70°C Continuous Drain Current, V
GS
@ -4.5V -4.3 A
I
DM
Pulsed Drain Current -43
P
D
@T
C
= 25°C Power Dissipation 2.5
P
D
@T
C
= 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
V
GS
Gate-to-Source Voltage ± 12 V
V
GSM
Gate-to-Source Voltage Single Pulse tp<10µs -16 V
E
AS
Single Pulse Avalanche Energy 140
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient ––– 50 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
SO-8
PD - 91879A
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