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器件3D模型￥ 5.213
IRF7304 其他数据使用手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
SOIC-8
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IRF7304数据手册
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HEXFET
®
Power MOSFET
PD - 95038
10/6/04
l
Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
IRF7304PbF
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
SO-8
Parameter Max. Units
I
D
@ T
A
= 25°C 10 Sec. Pulsed Drain Current, V
GS
@ -4.5V -4.7
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -4.5V -4.3
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -4.5V -3.4 A
I
DM
Pulsed Drain Current -17
P
D
@T
A
= 25°C Power Dissipation 2.0
Linear Derating Factor 0.016
V
GS
Gate-to-Source Voltage ±12 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
W/°C
V
DSS
= -20V
R
DS(on)
= 0.090Ω
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient 62.5
°C/W
l Lead-Free
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