Datasheet 搜索 > MOS管 > International Rectifier（国际整流器） > IRF7324D1 数据手册 > IRF7324D1 其他数据使用手册 1/8 页
器件3D模型￥ 0
IRF7324D1 其他数据使用手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
SOIC
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
IRF7324D1数据手册
Page:
of 8 Go
若手册格式错乱，请下载阅览PDF原文件
www.irf.com 1
IRF7324D1
FETKY
ä
MOSFET / Schottky Diode
10/18/04
The FETKY family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques
to achieve extremely low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Description
V
DSS
= -20V
R
DS(on)
= 0.27Ω
Schottky Vf = 0.39V
TM
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal for Mobile Phone Applications
l Generation V Technology
l SO-8 Footprint
Notes through are on page 8
SO-8
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
f
W
P
D
@T
A
= 70°C
Power Dissipation
f
dV/dt
Peak Diode Recovery
d
V/ns
Linear Derating Factor mW/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JL
Junction-to-Drain Lead
g
––– 20 °C/W
R
θ
JA
Junction-to-Ambient
fg
––– 62.5
Max.
-2.2
-1.8
-22
± 12
-20
-55 to + 150
2.0
16
1.3
-0.74
PD- 91789B
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
