Datasheet 搜索 > MOS管 > Infineon（英飞凌） > IRF7410 数据手册 > IRF7410 其他数据使用手册 1/9 页
器件3D模型￥ 7.207
IRF7410 其他数据使用手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
SOIC-8
Pictures:
3D模型
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IRF7410数据手册
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若手册格式错乱，请下载阅览PDF原文件
Parameter Max. Units
V
DS
Drain- Source Voltage -12 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -4.5V -16
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -4.5V -13 A
I
DM
Pulsed Drain Current -65
P
D
@T
A
= 25°C Power Dissipation 2.5
P
D
@T
A
= 70°C Power Dissipation 1.6
Linear Derating Factor 20 mW/°C
V
GS
Gate-to-Source Voltage ±8 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to +150 °C
8/2/06
www.irf.com 1
IRF7410
HEXFET
®
Power MOSFET
These P-Channel HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
Top View
8
1
2
3
4
5
6
7
D
D
DG
S
A
D
S
S
SO-8
V
DSS
R
DS(on)
max I
D
-12V 7mΩ@V
GS
= -4.5V -16A
9mΩ@V
GS
= -2.5V -13.6A
13mΩ@V
GS
= -1.8V -11.5A
PD - 94025A
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