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IRF7811A 其他数据使用手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
SOIC-8
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IRF7811A数据手册
Page:
of 10 Go
若手册格式错乱，请下载阅览PDF原文件
www.irf.com 1
02/14/07
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
IRF7811A
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max Q
g
28V 12mΩ 17nC
Notes through are on page 10
Applications
Benefits
l Very Low RDS(on) at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l 100% R
G
Tested
Absolute Maximum Ratin
g
s
Symbol Parameter Units
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
f
P
D
@T
A
= 70°C
Power Dissipation
f
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
T
J
Operating Junction and
T
STG
Storage Temperature Range
Smoldering Temperature, for 10 seconds
Thermal Resistance
Symbol Parameter Typ Max Units
R
θ
JL
Junction-to-Drain Lead
g
––– 20
R
θ
JA
Junction-to-Ambient
fg
––– 50
Max
11
f
9.1
f
91
W
°C/W
300 (1.6mm from case)
°C
-55 to + 150
2.5
0.02
1.6
±12
PD - 93811B
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