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IRF9530STRLPBF 其他数据使用手册 - Vishay Siliconix
制造商:
Vishay Siliconix
分类:
MOS管
封装:
TO-263-3
Pictures:
3D模型
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功能描述在P1P8
技术参数、封装参数在P1P2P8
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IRF9530STRLPBF数据手册
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若手册格式错乱，请下载阅览PDF原文件
IRF9530S, SiHF9530S
www.vishay.com
Vishay Siliconix
S16-0754-Rev. D, 02-May-16
1
Document Number: 91077
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
•P-channel
• 175 °C operating temperature
• Fast switching
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D
2
PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= -25 V, starting T
J
= 25 °C, L = 4.2 mH, R
g
= 25 , I
AS
= -12 A (see fig. 12).
c. I
SD
- 12 A, dI/dt 140 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V) -100
R
DS(on)
()V
GS
= -10 V 0.30
Q
g
max. (nC) 38
Q
gs
(nC) 6.8
Q
gd
(nC) 21
Configuration Single
S
G
D
P-Channel MOSFET
D
2
PAK (TO-263)
G
D
S
Available
Available
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263) D
2
PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9530S-GE3 SiHF9530STRL-GE3
a
SiHF9530STRR-GE3
a
Lead (Pb)-free
IRF9530SPbF IRF9530STRLPbF
a
IRF9530STRRPbF
a
SiHF9530S-E3 SiHF9530STL-E3
a
SiHF9530STR-E3
a
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at - 10 V
T
C
= 25 °C
I
D
-12
AT
C
= 100 °C -8.2
Pulsed Drain Current
a
I
DM
-48
Linear Derating Factor 0.59
W/°C
Linear Derating Factor (PCB mount)
e
0.025
Single Pulse Avalanche Energy
b
E
AS
400 mJ
Avalanche Current
a
I
AR
-12 A
Repetitive Avalanche Energy
a
E
AR
8.8 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
88
W
Maximum Power Dissipation (PCB mount)
e
T
A
= 25 °C 3.7
Peak Diode Recovery dV/dt
c
dV/dt - 5.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175
°C
Soldering Recommendations (Peak temperature)
d
for 10 s 300
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