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IRF9610
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IRF9610数据手册
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Document Number: 91080 www.vishay.com
S09-0046-Rev. A, 19-Jan-09 1
Power MOSFET
IRF9610, SiHF9610
Vishay Siliconix
FEATURES
Dynamic dV/dt Rating
P-Channel
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not applicable.
c. I
SD
- 1.8 A, dI/dt 70 A/µs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) - 200
R
DS(on)
(Ω)V
GS
= - 10 V 3.0
Q
g
(Max.) (nC) 11
Q
gs
(nC) 7.0
Q
gd
(nC) 4.0
Configuration Single
S
G
D
P-Channel MOSFET
TO-220
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220
Lead (Pb)-free
IRF9610PbF
SiHF9610-E3
SnPb
IRF9610
SiHF9610
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
- 200
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at - 10 V
T
C
= 25
I
D
- 1.8
A
T
C
= 100
- 1.0
Pulsed Drain Current
a
I
DM
- 7.0
Linear Derating Factor 0.16 W/°C
Maximum Power Dissipation T
C
= 25 °C P
D
20 W
Inductive Current, Clamp I
LM
- 7.0 A
Peak Diode Recovery dV/dt
c
dV/dt - 5.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply

IRF9610 数据手册

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