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IRFIBC40GLCPBF 其他数据使用手册 - VISHAY(威世)
制造商:
VISHAY(威世)
分类:
MOS管
封装:
TO-220-3
Pictures:
3D模型
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IRFIBC40GLCPBF数据手册
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Document Number: 91181 www.vishay.com
S-81275-Rev. A, 16-Jun-08 1
Power MOSFET
IRFIBC40GLC, SiHFIBC40GLC
Vishay Siliconix
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
RMS
(t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 12 µH, R
G
= 25 Ω, I
AS
= 3.5 A (see fig. 12).
c. I
SD
≤ 6.2 A, dI/dt ≤ 80 A/µs, V
DD
≤ V
DS
, T
J
≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 600
R
DS(on)
(Ω)V
GS
= 10 V 1.2
Q
g
(Max.) (nC) 39
Q
gs
(nC) 10
Q
gd
(nC) 19
Configuration Single
N-Channel MOSFET
G
D
S
S
D
G
TO-220 FULLPAK
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220 FULLPAK
Lead (Pb)-free
IRFIBC40GLCPbF
SiHFIBC40GLC-E3
SnPb
IRFIBC40GLC
SiHFIBC40GLC
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
600
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
3.5
AT
C
= 100 °C 2.2
Pulsed Drain Current
a
I
DM
14
Linear Derating Factor 0.32 W/°C
Single Pulse Avalanche Energy
b
E
AS
320 mJ
Repetitive Avalanche Current
a
I
AR
3.5 A
Repetitive Avalanche Energy
a
E
AR
4.0 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
40 W
Peak Diode Recovery dV/dt
c
dV/dt 3.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
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