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IRFPC60LCPBF 其他数据使用手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
中高压MOS管
封装:
TO-247
描述:
N 通道 MOSFET，600V 至 1000V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
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IRFPC60LCPBF数据手册
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若手册格式错乱，请下载阅览PDF原文件
Document Number: 91244 www.vishay.com
S11-0443-Rev. B, 14-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRFPC60LC, SiHFPC60LC
Vishay Siliconix
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V
GS
Rating
• Reduced C
iss
, C
oss
, C
rss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing advanced Power MOSFETs technology the device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device improvements combined with the proven
ruggedness and reliability of Power MOSFETs offer the
designer a new standart in power transistors for switching
applications.
The TO-247AC package is preferred for
commercial-industrial applications where higher power levels
preclude the use of TO-220AB devices. The TO-247AC is
similar but superior to the earlier TO-218 package because of
its isolated mounting hole.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 7.2 mH, R
g
= 25 Ω, I
AS
= 16 A (see fig. 12).
c. I
SD
≤ 16 A, dI/dt ≤ 140 A/μs, V
DD
≤ V
DS
, T
J
≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 600
R
DS(on)
(Ω)V
GS
= 10 V 0.40
Q
g
(Max.) (nC) 120
Q
gs
(nC) 29
Q
gd
(nC) 48
Configuration Single
N-Channel MOSFET
G
D
S
TO-247AC
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free
IRFPC60LCPbF
SiHFPC60LC-E3
SnPb
IRFPC60LC
SiHFPC60LC
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
600
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
16
AT
C
= 100 °C 10
Pulsed Drain Current
a
I
DM
64
Linear Derating Factor 2.2 W/°C
Single Pulse Avalanche Energy
b
E
AS
1000 mJ
Repetitive Avalanche Current
a
I
AR
16 A
Repetitive Avalanche Energy
a
E
AR
28 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
280 W
Peak Diode Recovery dV/dt
c
dV/dt 3.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
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