Datasheet 搜索 > MOS管 > VISHAY（威世） > IRFPF50 数据手册 > IRFPF50 其他数据使用手册 1/9 页
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IRFPF50 其他数据使用手册 - VISHAY（威世）
制造商:
VISHAY（威世）
分类:
MOS管
封装:
TO-247-3
描述:
功率MOSFET Power MOSFET
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8
标记信息在P9
技术参数、封装参数在P1
电气规格在P2
导航目录
IRFPF50数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
Parameter Max. Units
V
DS
Drain- Source Voltage -20 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -4.5V -2.9
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -4.5V -2.3 A
I
DM
Pulsed Drain Current -11
P
D
@T
A
= 25°C Power Dissipation 0.96
P
D
@T
A
= 70°C Power Dissipation 0.62
Linear Derating Factor 0.008 mW/°C
V
GS
Gate-to-Source Voltage ± 12 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
1/13/03
www.irf.com 1
IRF5810
HEXFET
®
Power MOSFET
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 130 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
V
DSS
R
DS(on)
max (mW) I
D
-20V 90@V
GS
= -4.5V -2.9A
135@V
GS
= -2.5V -2.3A
TSOP-6
These P-channel HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5810 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and R
DS(on)
reduction enables an increase in current-handling
capability.
Description
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
PD -94198A
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