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IRGR3B60KD2 其他数据使用手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
IGBT晶体管
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IRGR3B60KD2数据手册
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
03/24/03
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Benefits
www.irf.com 1
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
IRGR3B60KD2
E
G
n-channel
C
V
CES
= 600V
I
C
= 4.2A, T
C
=100°C
t
sc
> 10µs, T
J
=150°C
V
CE(on)
typ. = 1.9V
D-Pak
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 7.8 A
I
C
@ T
C
= 100°C Continuous Collector Current 4.2
I
CM
Pulse Collector Current (Ref.Fig.C.T.5) 15.6
I
LM
Clamped Inductive Load current
c
15.6
I
F
@ Tc = 25°C Diode Continous Forward Current 6.0
I
F
@ Tc = 100°C Diode Continuous Forward Current 3.2
I
FM
Diode Maximum Forward Current 15.6
V
GE
Gate-to-Emitter Voltage ±20 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 52 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 21
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case- IGBT ––– ––– 2.4 °C/W
R
θJC
Junction-to-Case- Diode ––– ––– 8.8
R
θJA
Junction-to-Ambient, (PCB Mount)
d
––– ––– 50
Wt Weight ––– 0.3 ––– g
PD - 94601A
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