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ISO5852S 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
描述:
ISO5852S 高 CMTI 2.5A/5A 隔离式 IGBT、MOSFET 栅极驱动器，具有分离输出
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3D模型
符号图
焊盘图
引脚图
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页面导航:
引脚图在P4Hot
典型应用电路图在P24P25
原理图在P1P21
封装尺寸在P34P37
焊盘布局在P35
标记信息在P37
封装信息在P33P37P38
技术参数、封装参数在P5P7
应用领域在P1P24P25P38
电气规格在P9P10
导航目录
ISO5852S数据手册
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GND1 V
EE2
RST
RDY
FLT
IN+
IN±
V
CC1
V
CC2
DESAT
GND2
OUTH
OUTL
CLAMP
V
CC1
V
CC1
UVLO1
Mute
Decoder
Q S
RQ
V
CC1
V
CC1
Gate Drive
and
Encoder
Logic
UVLO2
2 V
9 V
500 µA
STO
V
CC2
Ready
Fault
Copyright © 2016, Texas Instruments Incorporated
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO5852S
SLLSEQ0B –AUGUST 2015–REVISED JANUARY 2017
ISO5852S High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver
With Split Outputs and Active Protection Features
1
1 Features
1
• 100-kV/μs Minimum Common-Mode Transient
Immunity (CMTI) at V
CM
= 1500 V
• Split Outputs to Provide 2.5-A Peak Source and
5-A Peak Sink Currents
• Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
• 2-A Active Miller Clamp
• Output Short-Circuit Clamp
• Soft Turn-Off (STO) during Short Circuit
• Fault Alarm upon Desaturation Detection is
Signaled on FLT and Reset Through RST
• Input and Output Undervoltage Lockout (UVLO)
with Ready (RDY) Pin Indication
• Active Output Pulldown and Default Low Outputs
with Low Supply or Floating Inputs
• 2.25-V to 5.5-V Input Supply Voltage
• 15-V to 30-V Output Driver Supply Voltage
• CMOS Compatible Inputs
• Rejects Input Pulses and Noise Transients
Shorter Than 20 ns
• Operating Temperature: –40°C to +125°C
Ambient
• Isolation Surge Withstand Voltage 12800-V
PK
• Safety-Related Certifications:
– 8000-V
PK
V
IOTM
and 2121-V
PK
V
IORM
Reinforced Isolation per DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
– 5700-V
RMS
Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950–1 and IEC 60601–1 End Equipment
Standards
– TUV Certification per EN 61010-1 and EN
60950-1
– GB4943.1-2011 CQC Certification
2 Applications
• Isolated IGBT and MOSFET Drives in:
– Industrial Motor Control Drives
– Industrial Power Supplies
– Solar Inverters
– HEV and EV Power Modules
– Induction Heating
3 Description
The ISO5852S device is a 5.7-kV
RMS
, reinforced
isolated gate driver for IGBTs and MOSFETs with
split outputs, OUTH and OUTL, providing 2.5-A
source and 5-A sink current. The input side operates
from a single 2.25-V to 5.5-V supply. The output side
allows for a supply range from minimum 15 V to
maximum 30 V. Two complementary CMOS inputs
control the output state of the gate driver. The short
propagation time of 76 ns provides accurate control
of the output stage.
An internal desaturation (DESAT) fault detection
recognizes when the IGBT is in an overcurrent
condition. Upon a DESAT detect, a mute logic
immediately blocks the output of the isolator and
initiates a soft-turnoff procedure which disables the
OUTH pin and pulls the OUTL pin to low over a time
span of 2 μs. When the OUTL pin reaches 2 V with
respect to the most-negative supply potential, V
EE2
,
the gate-driver output is pulled hard to the V
EE2
potential, turning the IGBT immediately off.
Device Information
(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
ISO5852S SOIC (16) 10.30 mm × 7.50 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Functional Block Diagram
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