Datasheet 搜索 > Flash芯片 > Micron（镁光） > JS28F128J3D75A 数据手册 > JS28F128J3D75A 其他数据使用手册 1/68 页
器件3D模型￥ 538.963
JS28F128J3D75A 其他数据使用手册 - Micron（镁光）
制造商:
Micron（镁光）
分类:
Flash芯片
封装:
TSOP-56
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
原理图在P8P9P10
封装尺寸在P12P13P14
型号编码规则在P67
封装信息在P1P14
技术参数、封装参数在P13P19P21P23P24P27P29P30
电气规格在P21
型号编号列表在P67P68
导航目录
JS28F128J3D75A数据手册
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of 68 Go
若手册格式错乱，请下载阅览PDF原文件
308551-05
November 2007
Numonyx™ Embedded Flash Memory
(J3 v. D)
32, 64, 128, and 256 Mbit
Datasheet
Product Features
Architecture
— High-density symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
Performance
— 75 ns Initial Access Speed (128/64/32
-Mbit densities)
— 95 ns Initial Access Speed (256 Mbit only)
— 25 ns 8-word and 4-word Asynchronous
page-mode reads
— 32-Byte Write buffer
— 4 µs per Byte Effective programming time
System Voltage and Power
—V
CC
= 2.7 V to 3.6 V
—V
CCQ
= 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP package (32, 64, 128 Mbit
only)
— 64-Ball Numonyx
Easy BGA package (32,
42, 128 and 256 Mbit)
Security
— Enhanced security options for code
protection
— 128-bit Protection Register
— 64-bit Unique device identifier
— 64-bit User-programmable OTP cells
— Absolute protection with V
PEN
= GND
— Individual block locking
— Block erase/program lockout during power
transitions
Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash
Interface (CFI) Compatible
Quality and Reliability
— Operating temperature:
-40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process
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