Datasheet 搜索 > Flash芯片 > Micron（镁光） > JS28F256J3F105B TR 数据手册 > JS28F256J3F105B TR 其他数据使用手册 1/66 页
器件3D模型￥ 63.34
JS28F256J3F105B TR 其他数据使用手册 - Micron（镁光）
制造商:
Micron（镁光）
分类:
Flash芯片
封装:
TFSOP-56
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
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JS28F256J3F105B TR数据手册
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319942-02
December 2008
Numonyx™ StrataFlash
®
Embedded Memory
(J3-65nm)
256-Mbit
Datasheet
Product Features
Architecture
— Multi-Level Cell Technology: Highest
Density at Lowest Cost
— 256 symmetrically-sized blocks of 128
Kbytes
Performance
— 95 ns initial access time for Easy BGA
— 105 ns initial accsss time for TSOP
— 25 ns 16-word Asynchronous page-mode
reads
— 512-Word Buffer Programming at
1.46MByte/s (Typ)
Voltage and Power
—V
CC
(Core) = 2.7 V to 3.6 V
—V
CCQ
(I/O) = 2.7 V to 3.6 V
— Standby Current: 65 µA (Typ)
— Erase & Program Current: 35 mA (Typ)
— Page Read: 12 mA (Typ)
Quality and Reliability
— Operating temperature:
-40 °C to +85 °C
— 100K Minimum erase cycles per block
— 65 nm Numonyx
TM
ETOX™ X Process
technology
Security
— Enhanced security options for code
protection
— Absolute protection with V
PEN
= GND
— Individual block locking
— Block erase/program lockout during power
transition
— Password Access feature
— One-Time Programmable Register:
64 OTP bits, programmed with unique
information by Numonyx
64 OTP bits, available for customer
programming
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Numonyx™ Flash Data Integrator (FDI)
— Common Flash Interface (CFI) Compatible
Packaging
—56-Lead TSOP
— 64-Ball Easy BGA package
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