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Numonyx™ Embedded Flash Memory (J3 v. D)
Datasheet November 2007
6 308551-05
1.0 Introduction
This document contains information pertaining to the Numonyx™ Embedded Flash
Memory (J3 v. D) device features, operation, and specifications.
The Numonyx™ Embedded Flash Memory J3 Version D (J3 v. D) provides improved
mainstream performance with enhanced security features, taking advantage of the
high quality and reliability of the NOR-based Intel* 0.13 µm ETOX™ VIII process
technology. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the
Numonyx™ Embedded Flash Memory (J3 v. D) device brings reliable, low-voltage
capability (3 V read, program, and erase) with high speed, low-power operation. The
Numonyx™ Embedded Flash Memory (J3 v. D) device takes advantage of the proven
manufacturing experience and is ideal for code and data applications where high
density and low cost are required, such as in networking, telecommunications, digital
set top boxes, audio recording, and digital imaging. Numonyx Flash Memory
components also deliver a new generation of forward-compatible software support. By
using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers
can take advantage of density upgrades and optimized write capabilities of future
Numonyx Flash Memory devices.
1.1 Nomenclature
1.2 Acronyms
AMIN: All Densities AMIN = A0 for x8
All Densities AMIN = A1 for x16
AMAX:
32 Mbit AMAX = A21
64 Mbit AMAX = A22
128 Mbit AMAX = A23
Block: A group of flash cells that share common erase circuitry and erase simultaneously
Clear: Indicates a logic zero (0)
Program: To write data to the flash array
Set: Indicates a logic one (1)
VPEN: Refers to a signal or package connection name
V
PEN
: Refers to timing or voltage levels
CUI: Command User Interface
OTP: One Time Programmable
PLR: Protection Lock Register
PR: Protection Register
PRD: Protection Register Data
RFU: Reserved for Future Use

JS28F320J3D75B 数据手册

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