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JS28F320J3F75A 其他数据使用手册 - Alliance Memory（联盟记忆）
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型号编码规则在P66
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JS28F320J3F75A数据手册
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208032-04
Jan 2018
Numonyx
®
Embedded Flash Memory (J3 65
nm) Single Bit per Cell (SBC)
32, 64, and 128 Mbit
Datasheet
Product Features
Architecture
— Symmetrical 128-KB blocks
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
— Blank Check to verify an erased block
Performance
— Initial Access Speed: 75ns
— 25 ns 8-word Asynchronous page-mode
reads
— 256-Word write buffer for x16 mode, 256-
Byte write buffer for x8 mode;
1.41 µs per Byte Effective programming
time
System Voltage
—V
CC
= 2.7 V to 3.6 V
—V
CCQ
= 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP
— 64-Ball Easy BGA package
Security
— Enhanced security options for code
protection
— Absolute protection with V
PEN
= Vss
— Individual block locking
— Block erase/program lockout during power
transitions
— Password Access feature
— One-Time Programmable Register:
64 OTP bits, programmed with unique
information by Numonyx
64 OTP bits, available for customer
programming
Software
— Program and erase suspend support
—Numonyx
®
Flash Data Integrator (FDI)
— Common Flash Interface (CFI) Compatible
— Scalable Command Set
Quality and Reliability
— Operating temperature:
-40 °C to +85 °C
— 100K Minimum erase cycles per block
— 65 nm Flash Technology
— JESD47E Compliant
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2010 Micron Technology, Inc. All rights reserved.
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