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KBPC1506T 其他数据使用手册 - GeneSiC Semiconductor
制造商:
GeneSiC Semiconductor
分类:
二极管
封装:
KBPC-T
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KBPC1506T数据手册
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V
RRM
= 600 V - 1000 V
I
O
= 15 A
Features
KBPC-T/W Package
Mechanical Data
• High efficiency
• Metal case
Case: Mounted in the bridge encapsulation
• Not ESD Sensitive
• Silicon junction
Mounting position: Hole for #10 screw
• Types from 600 V to 1000 V V
RRM
Single Phase Silicon
Brid
g
e Rectifier
KBPC1506T/W thru KBPC1510T/W
Maximum ratings at Tc
= 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW
uses KBPC-W package)
Polarity: Marked on case
Parameter Symbol KBPC1506T/W KBPC1508T/W Unit
Repetitive peak reverse voltage
V
RRM
600 800 V
RMS reverse voltage
V
RMS
420 560 V
DC blocking voltage
V
DC
600 800 V
Operating temperature
T
j
-55 to 150 -55 to 150 °C
Storage temperature
T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol KBPC1506T/W KBPC1508T/W Unit
Maximum average forward rectified
current
I
O
15 15 A
Peak forward surge current
I
FSM
300 300 A
Maximum instantaneous forward
voltage per leg
1.1 1.1
55
500 500
T
yp
ical
j
unction ca
p
acitance
1
C
j
300 300 pF
Thermal characteristics
Typical thermal resistance
2
R
ΘJC
2.3 2.3
°C/W
1
- Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C.
2
- Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink
Conditions
300
Electrical characteristics at Tc = 25 °C, unless otherwise specified
-55 to 150
2.3
V
5
T
c
= 25 °C
I
F
= 7.5 A
Conditions
1000
700
KBPC1510T/W
-55 to 150
Maximum DC reverse current at
rated DC blocking voltage per leg
I
R
T
c
= 100 °C
μA
1000
KBPC1510T/W
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
T
c
= 55 °C
15
8.3 ms half sine-wave
300
500
V
F
1.1
Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
1
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