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L6385E 其他数据使用手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
FET驱动器
封装:
DIP-8
描述:
STMICROELECTRONICS L6385E 驱动器, IGBT, MOSFET, 高压侧和低压侧, -0.3V至17V电源, 650mA输出, 105ns延迟, DIP-8
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L6385E数据手册
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若手册格式错乱，请下载阅览PDF原文件
This is information on a product in full production.
September 2015 DocID13863 Rev 4 1/17
L6385E
High voltage high and low-side driver
Datasheet - production data
Features
High voltage rail up to 600 V
dV/dt immunity ± 50 V/nsec in full temperature
range
Driver current capability:
– 400 mA source
– 650 mA sink
Switching times 50/30 nsec rise/fall with 1 nF
load
CMOS/TTL Schmitt trigger inputs with
hysteresis and pull-down
Undervoltage lockout on lower and upper
driving section
Internal bootstrap diode
Outputs in phase with inputs
Applications
Home appliances
Induction heating
HVAC
Motor drivers
– SR motors
– DC, AC, PMDC and PMAC motors
Asymmetrical half-bridge topologies
Industrial applications and drives
Lighting applications
Factory automation
Power supply systems
Description
The L6385E is a simple and compact high voltage
gate driver, manufactured with the BCD™ “offline”
technology, and able to drive a half-bridge of
power MOSFET or IGBT devices. The high-side
(floating) section is able to work with voltage rail
up to 600 V. Both device outputs can
independently sink and source 650 mA and 400
mA respectively and can be simultaneously
driven high in order to drive asymmetrical half-
bridge configurations.
The L6385E device provides two input pins and
two output pins and guarantees the outputs toggle
in phase with inputs. The logic inputs are
CMOS/TTL compatible to ease the interfacing
with controlling devices.
The bootstrap diode is integrated inside the
device, allowing a more compact and reliable
solution.
The L6385E features the UVLO protection on
both lower and upper driving sections (V
CC
and
V
BOOT
), ensuring greater protection against
voltage drops on the supply lines.
The device is available in a DIP-8 tube and SO-8
tube, and tape and reel packaging options.
DIP-8 SO-8
www.st.com
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