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LM5112MY/NOPB 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
FET驱动器
封装:
PowerPad-MSOP-8
描述:
TEXAS INSTRUMENTS LM5112MY/NOPB 驱动器, MOSFET, 低压侧, 3.5V-14V电源, 7A输出, 25ns延迟, MSOP-8
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LM5112MY/NOPB数据手册
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Copyright © 2016, Texas Instruments Incorporated
IN
INB
OUT
V
EE
IN_REF
LM5112
V
CC
UVLO
IN_REF
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM5112
,
LM5112-Q1
SNVS234C –SEPTEMBER 2004–REVISED SEPTEMBER 2016
LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver
1
1 Features
1
• LM5112-Q1 is Qualified for Automotive
Applications
• AEC-Q100 Grade 1 Qualified
• Manufactured on an Automotive Grade Flow
• Compound CMOS and Bipolar Outputs Reduce
Output Current Variation
• 7-A Sink and 3-A Source Current
• Fast Propagation Times: 25 ns (Typical)
• Fast Rise and Fall Times: 14 ns or 12 ns
Rise or Fall With 2-nF Load
• Inverting and Non-Inverting Inputs Provide Either
Configuration With a Single Device
• Supply Rail Undervoltage Lockout Protection
• Dedicated Input Ground (IN_REF) for
Split Supply or Single Supply Operation
• Power Enhanced 6-Pin WSON Package
(3 mm × 3 mm) or Thermally Enhanced
MSOP-PowerPAD Package
• Output Swings From V
CC
to V
EE
Which Are
Negative Relative to Input Ground
2 Applications
• DC to DC Switch-Mode Power Supplies
• AC to DC Switch-Mode Power Supplies
• Solar Microinverters
• Solenoid and Motor Drives
3 Description
The LM5112 device MOSFET gate driver provides
high peak gate drive current in the tiny 6-pin WSON
package (SOT-23 equivalent footprint) or an 8-pin
exposed-pad MSOP package with improved power
dissipation required for high frequency operation. The
compound output driver stage includes MOS and
bipolar transistors operating in parallel that together
sink more than 7 A peak from capacitive loads.
Combining the unique characteristics of MOS and
bipolar devices reduces drive current variation with
voltage and temperature. Undervoltage lockout
protection is provided to prevent damage to the
MOSFET due to insufficient gate turnon voltage. The
LM5112 device provides both inverting and non-
inverting inputs to satisfy requirements for inverting
and non-inverting gate drive with a single device type.
Device Information
(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
LM5112,
LM5112-Q1
WSON (6) 3.00 mm × 3.00 mm
MSOP PowerPAD (8) 3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Block Diagram
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