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M25P80-VMN3PB
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M25P80-VMN3PB数据手册
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Micron M25P80 Serial Flash Embedded
Memory
8Mb, 3V
Features
SPI bus-compatible serial interface
8Mb Flash memory
75 MHz clock frequency (maximum)
2.7V to 3.6V single supply voltage
Page program (up to 256 bytes) in 0.64ms (TYP)
Erase capability
Sector erase: 512Kb in 0.6 s (TYP)
Bulk erase: 8Mb in 8 s (TYP)
Write protection
Hardware write protection: protected area size
defined by nonvolatile bits BP0, BP1, BP2
Deep power-down: 1µA (TYP)
Electronic signature
JEDEC-standard 2-byte signature (2014h)
Unique ID code (UID) and 16 bytes of common
Flash interface (CFI) data
RES command, one-byte signature (13h) for
backward compatibility
More than 100,000 write cycles per sector
More than 20 years data retention
Automotive-grade parts available
Packages (RoHS-compliant)
SO8N (MN) 150 mils
SO8W (MW) 208 mils
VFDFPN8 (MP) MLP8 6mm x 5mm
UFDFPN8 (MC) MLP8 4mm x 3mm
Micron M25P80 Serial Flash Embedded Memory
Features
PDF: 09005aef84566560
m25p80.pdf - Rev. H 4/15 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

M25P80-VMN3PB 数据手册

Micron(镁光)
52 页 / 0.66 MByte

M25P80VMN3 数据手册

ST Microelectronics(意法半导体)
512 Kb到32兆位,低电压,串行闪存采用40 MHz或50 MHz的SPI总线接口 512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
ST Microelectronics(意法半导体)
ST Microelectronics(意法半导体)
Micron(镁光)
Micron(镁光)
Micron(镁光)
Micron(镁光)
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