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MAX4885EEVKIT+ 其他数据使用手册 - Maxim Integrated（美信）
制造商:
Maxim Integrated（美信）
分类:
开发套件
封装:
KIT
描述:
Eval Kit MAX4885E (Ultra Low-Capacitance VGA Switch with 卤15kV ESD)
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MAX4885EEVKIT+数据手册
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SQ3426EEV
www.vishay.com
Vishay Siliconix
S12-0326-Rev. D, 27-Feb-12
1
Document Number: 65351
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFET
• Typical ESD Protection 800 V
• AEC-Q101 Qualified
•100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2011/65/EU
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR-4 material).
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
(Ω) at V
GS
= 10 V 0.042
R
DS(on)
(Ω) at V
GS
= 4.5 V 0.063
I
D
(A) 7
Configuration Single
N-Channel MOSFET
(4) S
(1, 2, 5, 6) D
(3) G
TSOP-6
Top V iew
6
4
1
2
3
5
2.85 mm
3 mm
Marking Code: 8Axxx
ORDERING INFORMATION
Package TSOP-6
Lead (Pb)-free and Halogen-free SQ3426EEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
7
A
T
C
= 125 °C 4
Continuous Source Current (Diode Conduction) I
S
6
Pulsed Drain Current
a
I
DM
29
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
10
Single Pulse Avalanche Energy E
AS
5mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
5
W
T
C
= 125 °C 1.6
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
110
°C/W
Junction-to-Foot (Drain) R
thJF
30
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