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MC14093BDR2G 其他数据使用手册 - ON Semiconductor(安森美)
制造商:
ON Semiconductor(安森美)
分类:
逻辑芯片
封装:
SOIC-14
描述:
ON SEMICONDUCTOR MC14093BDR2G NAND SCHMITT TRIGGER, QUAD, SOIC-14 新
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型号编码规则在P1P2P9
标记信息在P1P9
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MC14093BDR2G数据手册
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© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 9
1 Publication Order Number:
MC14093B/D
MC14093B
Quad 2-Input “NAND"
Schmitt Trigger
The MC14093B Schmitt trigger is constructed with MOS
P−channel and N−channel enhancement mode devices in a single
monolithic structure. These devices find primary use where low power
dissipation and/or high noise immunity is desired. The MC14093B
may be used in place of the MC14011B quad 2−input NAND gate for
enhanced noise immunity or to “square up” slowly changing
waveforms.
Features
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Capable of Driving Two Low−Power TTL Loads or One Low−Power
Schottky TTL Load Over the Rated Temperature Range
• Triple Diode Protection on All Inputs
• Pin−for−Pin Compatible with CD4093
• Can be Used to Replace MC14011B
• Independent Schmitt−Trigger at each Input
• These Devices are Pb−Free and are RoHS Compliant
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
MAXIMUM RATINGS (Voltages Referenced to V
SS
)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage Range −0.5 to +18.0 V
V
in
, V
out
Input or Output Voltage Range
(DC or Transient)
−0.5 to V
DD
+ 0.5 V
I
in
, I
out
Input or Output Current
(DC or Transient) per Pin
±10 mA
P
D
Power Dissipation,
per Package (Note 1)
500 mW
T
A
Ambient Temperature Range −55 to +125 °C
T
stg
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature
(8−Second Soldering)
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high−impedance circuit. For proper operation, V
in
and V
out
should be constrained
to the range V
SS
v (V
in
or V
out
) v V
DD
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
either V
SS
or V
DD
). Unused outputs must be left open.
http://onsemi.com
MARKING
DIAGRAMS
1
14
PDIP−14
P SUFFIX
CASE 646
MC14093BCP
AWLYYWWG
SOIC−14
D SUFFIX
CASE 751A
TSSOP−14
DT SUFFIX
CASE 948G
1
14
14093BG
AWLYWW
14
093B
ALYW G
G
1
14
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G or G = Pb−Free Package
SOEIAJ−14
F SUFFIX
CASE 965
1
14
MC14093B
ALYWG
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
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